STGWA60NC60WDR

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Manufacturer part number:STGWA60NC60WDR

Manufacturer:STMicroelectronics

Description:STGWA60NC60WDR datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWA60NC60WDR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Base Part Number	STGWA60
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	130A
Reverse Recovery Time	42 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	69 ns
Test Condition	390V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 40A
Turn Off Time-Nom (toff)	343 ns
Gate Charge	195nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	40ns/240ns
Switching Energy	743μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant