SGB02N120ATMA1                      Description

IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.

SGB02N120ATMA1                     Features 

? Lower Eoff compared to previous generation

? Short circuit withstand time – 10 μs

? Designed for:

- Motor controls

- Inverter

- SMPS

? NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

? Qualified according to JEDEC1

 for target applications

? Pb-free lead plating; RoHS compliant

SGB02N120ATMA1                    Applications

Desktop PC power supplies for

Next-generation AMD processors

Voltage regulator modules (VRM)