FGP20N60UFDTU

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Manufacturer part number:FGP20N60UFDTU

Manufacturer:ON Semiconductor

Description:FGP20N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGP20N60UFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	165W
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	13 ns
Power - Max	165W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	87 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	35 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	29 ns
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 20A
Turn Off Time-Nom (toff)	155 ns
IGBT Type	Field Stop
Gate Charge	63nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	13ns/87ns
Switching Energy	380μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	64ns
Height	16.51mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free