Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NJVMJD32CT4G-VF01

NJVMJD32CT4G-VF01

NJVMJD32CT4G-VF01

ON Semiconductor

NJVMJD32CT4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD32CT4G-VF01 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MJD32C
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.56W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Transition Frequency 3MHz
Frequency - Transition 3MHz
RoHS StatusROHS3 Compliant
In-Stock:3193 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.313590$0.31359
10$0.295840$2.9584
100$0.279094$27.9094
500$0.263297$131.6485
1000$0.248393$248.393

NJVMJD32CT4G-VF01 Product Details

NJVMJD32CT4G-VF01 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.In the part, the transition frequency is 3MHz.This device displays a 100V maximum voltage - Collector Emitter Breakdown.

NJVMJD32CT4G-VF01 Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz

NJVMJD32CT4G-VF01 Applications


There are a lot of ON Semiconductor NJVMJD32CT4G-VF01 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News