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FJA4210OTU

FJA4210OTU

FJA4210OTU

ON Semiconductor

FJA4210OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA4210OTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory Other Transistors
Voltage - Rated DC -140V
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A 4V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 140V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -200V
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.205139 $2.205139
10 $2.080320 $20.8032
100 $1.962566 $196.2566
500 $1.851477 $925.7385
1000 $1.746677 $1746.677
FJA4210OTU Product Details

FJA4210OTU Overview


In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 500mA, 5A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.As you can see, the part has a transition frequency of 30MHz.During maximum operation, collector current can be as low as 10A volts.

FJA4210OTU Features


the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz

FJA4210OTU Applications


There are a lot of ON Semiconductor FJA4210OTU applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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