FJA4210OTU Overview
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 500mA, 5A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.As you can see, the part has a transition frequency of 30MHz.During maximum operation, collector current can be as low as 10A volts.
FJA4210OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz
FJA4210OTU Applications
There are a lot of ON Semiconductor FJA4210OTU applications of single BJT transistors.
- Interface
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- Inverter
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- Muting
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- Driver
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