TIP142 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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TIP142 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
125W
Current Rating
10A
Base Part Number
TIP142
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
125W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 10A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
500
VCEsat-Max
3 V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.11000
$2.11
30
$1.80533
$54.1599
120
$1.55608
$186.7296
510
$1.30024
$663.1224
1,020
$1.09823
$1.09823
2,520
$1.03089
$2.06178
5,010
$1.01967
$5.09835
TIP142 Product Details
Description
The TIP142 is a Darlington transistor with complementary power. Planar technology is used to create the devices, which have a "base island" layout and a monolithic Darlington configuration. The transistors that result have an outstanding high gain performance and a very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
■ High DC Current Gain
Min hFE = 1000 @ IC
= 5 A, VCE = 4 V
■ Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 100 Vdc (Min)
■ Monolithic Construction with Built-In Base-Emitter Shunt Resistor