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TIP142

TIP142

TIP142

STMicroelectronics

TIP142 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

TIP142 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 125W
Current Rating 10A
Base Part Number TIP142
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 125W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 10A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 500
VCEsat-Max 3 V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.11000 $2.11
30 $1.80533 $54.1599
120 $1.55608 $186.7296
510 $1.30024 $663.1224
1,020 $1.09823 $1.09823
2,520 $1.03089 $2.06178
5,010 $1.01967 $5.09835
TIP142 Product Details

Description


The TIP142 is a Darlington transistor with complementary power. Planar technology is used to create the devices, which have a "base island" layout and a monolithic Darlington configuration. The transistors that result have an outstanding high gain performance and a very low saturation voltage.



Features


■ Monolithic Darlington configuration

■ Integrated antiparallel collector-emitter diode

■ High DC Current Gain

Min hFE = 1000 @ IC

= 5 A, VCE = 4 V

■ Collector-Emitter Sustaining Voltage @ 30 mA

VCEO(sus) = 100 Vdc (Min)

■ Monolithic Construction with Built-In Base-Emitter Shunt Resistor

■ Pb-Free Packages are Available



Applications


■ Linear and switching industrial equipment

■ Switch

■ Amplifier

■ Calculators

■ Switched-mode power supplies


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