KSE44H11TU Overview

This device has a DC current gain of 60 @ 2A 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.The maximum collector current is 10A volts.

KSE44H11TU Features

the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz

KSE44H11TU Applications

There are a lot of ON Semiconductor KSE44H11TU applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver