SMMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBT5551LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
MMBT5551
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
60mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Current - Collector (Ic) (Max)
600mA
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
VCEsat-Max
0.2 V
Height
1.11mm
Length
3.04mm
Width
2.64mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.060160
$0.06016
500
$0.044235
$22.1175
1000
$0.036863
$36.863
2000
$0.033819
$67.638
5000
$0.031607
$158.035
10000
$0.029401
$294.01
15000
$0.028435
$426.525
50000
$0.027959
$1397.95
SMMBT5551LT1G Product Details
SMMBT5551LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Input voltage breakdown is available at 160V volts.During maximum operation, collector current can be as low as 60mA volts.
SMMBT5551LT1G Features
the DC current gain for this device is 80 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 6V
SMMBT5551LT1G Applications
There are a lot of ON Semiconductor SMMBT5551LT1G applications of single BJT transistors.