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FJC1963QTF

FJC1963QTF

FJC1963QTF

ON Semiconductor

FJC1963QTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJC1963QTF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
In-Stock:4616 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.096960$0.09696
500$0.071294$35.647
1000$0.059412$59.412
2000$0.054506$109.012
5000$0.050940$254.7
10000$0.047386$473.86
15000$0.045828$687.42
50000$0.045062$2253.1

FJC1963QTF Product Details

FJC1963QTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 150mA, 1.5A.Product comes in the supplier's device package SOT-89-3.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

FJC1963QTF Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the supplier device package of SOT-89-3

FJC1963QTF Applications


There are a lot of ON Semiconductor FJC1963QTF applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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