FJC1963QTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJC1963QTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
450mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.096960
$0.09696
500
$0.071294
$35.647
1000
$0.059412
$59.412
2000
$0.054506
$109.012
5000
$0.050940
$254.7
10000
$0.047386
$473.86
15000
$0.045828
$687.42
50000
$0.045062
$2253.1
FJC1963QTF Product Details
FJC1963QTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 150mA, 1.5A.Product comes in the supplier's device package SOT-89-3.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
FJC1963QTF Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 450mV @ 150mA, 1.5A the supplier device package of SOT-89-3
FJC1963QTF Applications
There are a lot of ON Semiconductor FJC1963QTF applications of single BJT transistors.