FJP5200OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP5200OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
1.8g
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
80W
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Power - Max
80W
Gain Bandwidth Product
30MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
RoHS Status
RoHS Compliant
FJP5200OTU Product Details
FJP5200OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.A maximum collector current of 17A volts is possible.
FJP5200OTU Features
the DC current gain for this device is 80 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V
FJP5200OTU Applications
There are a lot of ON Semiconductor FJP5200OTU applications of single BJT transistors.