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FJP5200OTU

FJP5200OTU

FJP5200OTU

ON Semiconductor

FJP5200OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP5200OTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature-50°C~150°C TJ
PackagingTube
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation80W
Frequency 30MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation100W
Power - Max 80W
Gain Bandwidth Product30MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
RoHS StatusRoHS Compliant
In-Stock:1706 items

FJP5200OTU Product Details

FJP5200OTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.A maximum collector current of 17A volts is possible.

FJP5200OTU Features


the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V

FJP5200OTU Applications


There are a lot of ON Semiconductor FJP5200OTU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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