FJP5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJP5200RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
100W
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Power - Max
80W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.424080
$5.42408
10
$5.117057
$51.17057
100
$4.827412
$482.7412
500
$4.554162
$2277.081
1000
$4.296379
$4296.379
FJP5200RTU Product Details
FJP5200RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 55 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 30MHz is present in the part.Maximum collector currents can be below 17A volts.
FJP5200RTU Features
the DC current gain for this device is 55 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V a transition frequency of 30MHz
FJP5200RTU Applications
There are a lot of ON Semiconductor FJP5200RTU applications of single BJT transistors.