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FJP5200RTU

FJP5200RTU

FJP5200RTU

ON Semiconductor

FJP5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP5200RTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-50°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation100W
Frequency 30MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation100W
Power - Max 80W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1829 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.424080$5.42408
10$5.117057$51.17057
100$4.827412$482.7412
500$4.554162$2277.081
1000$4.296379$4296.379

FJP5200RTU Product Details

FJP5200RTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 55 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 30MHz is present in the part.Maximum collector currents can be below 17A volts.

FJP5200RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz

FJP5200RTU Applications


There are a lot of ON Semiconductor FJP5200RTU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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