FJP5200RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 55 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 30MHz is present in the part.Maximum collector currents can be below 17A volts.
FJP5200RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
FJP5200RTU Applications
There are a lot of ON Semiconductor FJP5200RTU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface