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FJP9100TU

FJP9100TU

FJP9100TU

ON Semiconductor

FJP9100TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP9100TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 40W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 2A
Voltage - Collector Emitter Breakdown (Max) 275V
Current - Collector (Ic) (Max) 4A
FJP9100TU Product Details

FJP9100TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 500mA 5V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-220-3 contains the product.The device has a 275V maximal voltage - Collector Emitter Breakdown.

FJP9100TU Features


the DC current gain for this device is 1000 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 5mA, 2A
the supplier device package of TO-220-3

FJP9100TU Applications


There are a lot of ON Semiconductor FJP9100TU applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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