FJP9100TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP9100TU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
40W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 2A
Voltage - Collector Emitter Breakdown (Max)
275V
Current - Collector (Ic) (Max)
4A
FJP9100TU Product Details
FJP9100TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 500mA 5V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Supplier package TO-220-3 contains the product.The device has a 275V maximal voltage - Collector Emitter Breakdown.
FJP9100TU Features
the DC current gain for this device is 1000 @ 500mA 5V the vce saturation(Max) is 1.5V @ 5mA, 2A the supplier device package of TO-220-3
FJP9100TU Applications
There are a lot of ON Semiconductor FJP9100TU applications of single BJT transistors.