BC546ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC546ATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW NOISE
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC546
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
0.625W
RoHS Status
ROHS3 Compliant
BC546ATA Product Details
BC546ATA Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.In the part, the transition frequency is 300MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC546ATA Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 300MHz
BC546ATA Applications
There are a lot of ON Semiconductor BC546ATA applications of single BJT transistors.