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BD243ATU

BD243ATU

BD243ATU

ON Semiconductor

BD243ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD243ATU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD243
Power - Max 65W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 6A
BD243ATU Product Details

BD243ATU Overview


In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 6A.Supplier device package TO-220-3 comes with the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

BD243ATU Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the supplier device package of TO-220-3

BD243ATU Applications


There are a lot of ON Semiconductor BD243ATU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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