BD243ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD243ATU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD243
Power - Max
65W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
BD243ATU Product Details
BD243ATU Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 6A.Supplier device package TO-220-3 comes with the product.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
BD243ATU Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the supplier device package of TO-220-3
BD243ATU Applications
There are a lot of ON Semiconductor BD243ATU applications of single BJT transistors.