FJPF13009H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF13009H1TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
50W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Frequency
4MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJPF13009
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 8A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 3A, 12A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
6
Height
16.07mm
Length
10.36mm
Width
4.9mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.439026
$1.439026
10
$1.357572
$13.57572
100
$1.280728
$128.0728
500
$1.208234
$604.117
1000
$1.139844
$1139.844
FJPF13009H1TU Product Details
FJPF13009H1TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 8A 5V.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.A VCE saturation (Max) of 3V @ 3A, 12A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.There is a transition frequency of 4MHz in the part.Maximum collector currents can be below 12A volts.
FJPF13009H1TU Features
the DC current gain for this device is 6 @ 8A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 3A, 12A the emitter base voltage is kept at 9V a transition frequency of 4MHz
FJPF13009H1TU Applications
There are a lot of ON Semiconductor FJPF13009H1TU applications of single BJT transistors.