KSB1151YSTU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 2A 1V.A collector emitter saturation voltage of -140mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

KSB1151YSTU Features

the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A

KSB1151YSTU Applications

There are a lot of ON Semiconductor KSB1151YSTU applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver