2SCR554P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR554P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
300MHz
Max Breakdown Voltage
80V
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.345120
$0.34512
10
$0.325585
$3.25585
100
$0.307156
$30.7156
500
$0.289769
$144.8845
1000
$0.273367
$273.367
2SCR554P5T100 Product Details
2SCR554P5T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.A VCE saturation (Max) of 300mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).There is a transition frequency of 300MHz in the part.A breakdown input voltage of 80V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SCR554P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 300mV @ 25mA, 500mA a transition frequency of 300MHz
2SCR554P5T100 Applications
There are a lot of ROHM Semiconductor 2SCR554P5T100 applications of single BJT transistors.