NSCT3906LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSCT3906LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-40V
Max Power Dissipation
225mW
Power - Max
225mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.013662
$0.013662
500
$0.010045
$5.0225
1000
$0.008371
$8.371
2000
$0.007680
$15.36
5000
$0.007178
$35.89
10000
$0.006677
$66.77
15000
$0.006457
$96.855
50000
$0.006349
$317.45
NSCT3906LT1G Product Details
NSCT3906LT1G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A maximum collector current of 200mA volts is possible.
NSCT3906LT1G Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA
NSCT3906LT1G Applications
There are a lot of ON Semiconductor NSCT3906LT1G applications of single BJT transistors.