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NSCT3906LT1G

NSCT3906LT1G

NSCT3906LT1G

ON Semiconductor

NSCT3906LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSCT3906LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -40V
Max Power Dissipation 225mW
Power - Max 225mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.013662 $0.013662
500 $0.010045 $5.0225
1000 $0.008371 $8.371
2000 $0.007680 $15.36
5000 $0.007178 $35.89
10000 $0.006677 $66.77
15000 $0.006457 $96.855
50000 $0.006349 $317.45
NSCT3906LT1G Product Details

NSCT3906LT1G Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A maximum collector current of 200mA volts is possible.

NSCT3906LT1G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA

NSCT3906LT1G Applications


There are a lot of ON Semiconductor NSCT3906LT1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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