FQA13N50C

new-10%

Manufacturer part number:FQA13N50C

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 13.5A TO-3P

Case Package:SOT-23

Datasheet:FQA13N50C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	13.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	218W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	218W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 6.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2055pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13.5A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	13.5A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.48Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	860 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free