IRFH5255TRPBF

new-10%

Manufacturer part number:IRFH5255TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 15A 8VQFN

Case Package:SOT-23

Datasheet:IRFH5255TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	6MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.6W Ta 26W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	988pF @ 13V
Current - Continuous Drain (Id) @ 25°C	15A Ta 51A Tc
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Rise Time	10.7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.8 ns
Turn-Off Delay Time	6.5 ns
Continuous Drain Current (ID)	51A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	53 mJ
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free