IRLR8729PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR8729PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
8.9MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
55W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
55W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C
58A Tc
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Rise Time
47ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
58A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
50A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
260A
Avalanche Energy Rating (Eas)
74 mJ
Recovery Time
24 ns
Nominal Vgs
1.8 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.88000
$0.88
10
$0.77800
$7.78
100
$0.60660
$60.66
500
$0.48838
$244.19
IRLR8729PBF Product Details
IRLR8729PBF Description
IRLR8729PBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. It is able to provide extremely low RDS (on), ultra-low gate impedance, and fully characterized avalanche voltage and current. All of these enable the power MOSFET IRLR8729PBF to be efficient and reliable in various applications.
IRLR8729PBF Features
Extremely low RDS (on)
Ultra-low gate impedance
Available in the D-Pak package
Full characterized avalanche voltage and current
IRLR8729PBF Applications
High-frequency synchronous buck converters for computer processor power
High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use