FQA28N50

new-10%

Manufacturer part number:FQA28N50

Manufacturer:ON Semiconductor

Description:FQA28N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA28N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 week ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	28.4A
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Turn On Delay Time	100 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 14.2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28.4A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	290ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	175 ns
Turn-Off Delay Time	250 ns
Continuous Drain Current (ID)	28.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Nominal Vgs	5 V
Height	18.9mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free