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FQAF33N10L

FQAF33N10L

FQAF33N10L

ON Semiconductor

Trans MOSFET N-CH 100V 25.8A 3-Pin(3+Tab) TO-3PF

SOT-23

FQAF33N10L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52mOhm @ 12.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25.8A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V

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