FQB27N25TM-F085

new-10%

Manufacturer part number:FQB27N25TM-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 250V 25.5A 131M

Case Package:SOT-23

Datasheet:FQB27N25TM-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LIFETIME (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Resistance	110mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	417W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	131m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25.5A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	122ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	25.5A
Gate to Source Voltage (Vgs)	30V
DS Breakdown Voltage-Min	250V
Avalanche Energy Rating (Eas)	972 mJ
RoHS Status	ROHS3 Compliant