FQB7N65CTM

new-10%

Manufacturer part number:FQB7N65CTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 650V 7A D2PAK

Case Package:SOT-23

Datasheet:FQB7N65CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	2
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Current Rating	7A
Number of Elements	1
Power Dissipation-Max	173W Tc
Element Configuration	Single
Power Dissipation	173W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1245pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	650V
Input Capacitance	1.245nF
Drain to Source Resistance	1.4Ohm
Rds On Max	1.4 Ω
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free