FQB9N25TM

new-10%

Manufacturer part number:FQB9N25TM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 250V 9.4A D2PAK

Case Package:SOT-23

Datasheet:FQB9N25TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Current Rating	9.4A
Power Dissipation-Max	3.13W Ta 90W Tc
Element Configuration	Single
Power Dissipation	3.13W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	420mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	105ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	9.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Input Capacitance	700pF
Drain to Source Resistance	420mOhm
Rds On Max	420 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free