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FQD12N20LTM-F085P

  • FQD12N20LTM-F085P
  • FQD12N20LTM-F085P

FQD12N20LTM-F085P

FQD12N20LTM-F085P

ON Semiconductor

NMOS DPAK 200V 280 MOHM

SOT-23

FQD12N20LTM-F085P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
Part Status Not For New Designs
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 55W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.85239 $1.70478

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