SIA400EDJ-T1-GE3

new-10%

Manufacturer part number:SIA400EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:Single N-Channel 30 V 0.025 Ohm 17.4 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L

Case Package:SOT-23

Datasheet:SIA400EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	6
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	19.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 11A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1265pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant