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BSC220N20NSFDATMA1

  • BSC220N20NSFDATMA1
  • BSC220N20NSFDATMA1

BSC220N20NSFDATMA1

BSC220N20NSFDATMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22m Ω @ 52A, 10V ±20V 3680pF @ 100V 43nC @ 10V 200V 8-PowerTDFN

SOT-23

BSC220N20NSFDATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 214W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 4V @ 137μA
Input Capacitance (Ciss) (Max) @ Vds 3680pF @ 100V
Current - Continuous Drain (Id) @ 25°C 52A
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $2.03611 $10.18055
BSC220N20NSFDATMA1 Product Details

BSC220N20NSFDATMA1 Description


BSC220N20NSFDATMA1 is an N-channel Power MOSFTE transistor from manufacturer Infineon Technologies with a Drain to Source Voltage (Vdss) of 200V. The operating temperature of the BSC220N20NSFDATMA1 is -55??C~175??C TJ and its maximum power dissipation is 214W Tc. BSC220N20NSFDATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.



BSC220N20NSFDATMA1 Features


  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V

  • Drive Voltage (Max Rds On,Min Rds On): 10V

  • Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 100V

  • Power Dissipation-Max: 214W Tc



BSC220N20NSFDATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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