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FDMA86108LZ

FDMA86108LZ

FDMA86108LZ

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 243m Ω @ 2.2A, 10V ±20V 163pF @ 50V 3nC @ 10V 100V 6-VDFN Exposed Pad

SOT-23

FDMA86108LZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 2.4W Ta
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 243m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 163pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.2A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
FDMA86108LZ Product Details

FDMA86108LZ Description

This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.



FDMA86108LZ Features 

Max rDS(on) = 243 m|? at VGS = 10 V, ID = 2.2 A

Max rDS(on) = 366 m|? at VGS = 4.5 V, ID = 1.8 A

Low Profile - 0.8 mm Maximum in the New Package MicroFET 2x2 mm

Free from Halogenated Compounds and Antimony Oxides

RoHS Compliant



FDMA86108LZ Applications

This product is general usage and suitable for many different applications.


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