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SQJ461EP-T1_GE3

SQJ461EP-T1_GE3

SQJ461EP-T1_GE3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 16mOhm @ 14.4A, 10V ±20V 4710pF @ 30V 140nC @ 10V 60V PowerPAK® SO-8

SOT-23

SQJ461EP-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Power Dissipation 83W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4710pF @ 30V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -30A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Height 1.14mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
SQJ461EP-T1_GE3 Product Details

SQJ461EP-T1_GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4710pF @ 30V.This device conducts a continuous drain current (ID) of -30A, which is the maximum continuous current transistor can conduct.Using VGS=-60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SQJ461EP-T1_GE3 Features


a continuous drain current (ID) of -30A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 70 ns
a threshold voltage of -2V
a 60V drain to source voltage (Vdss)


SQJ461EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJ461EP-T1_GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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