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IXFH60N65X2-4

  • IXFH60N65X2-4
  • IXFH60N65X2-4

IXFH60N65X2-4

IXFH60N65X2-4

IXYS

MOSFET N-CH

SOT-23

IXFH60N65X2-4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 780W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.313467 $11.313467
10 $10.673083 $106.73083
100 $10.068946 $1006.8946
500 $9.499005 $4749.5025
1000 $8.961326 $8961.326

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