FQD5N50CTM

new-10%

Manufacturer part number:FQD5N50CTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 4A DPAK

Case Package:SOT-23

Datasheet:FQD5N50CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	QFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.5W Ta 48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	625pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	500V
Height	2.3mm
Length	6.6mm
Width	6.1mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free