FQH90N15 Description

The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices are ideal for low voltage tasks like DC motor control, high efficiency switching for DC/DC converters, and audio amplifiers. They also provide a steady supply of power.

FQH90N15 Features

• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V

• Low gate charge (typical 220 NC)

• Low Cross (typical 200 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

FQH90N15 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial