FQH90N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQH90N15 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
375W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
18mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
90A Tc
Gate Charge (Qg) (Max) @ Vgs
285nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
FQH90N15 Product Details
FQH90N15 Description
The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices are ideal for low voltage tasks like DC motor control, high efficiency switching for DC/DC converters, and audio amplifiers. They also provide a steady supply of power.