NP109N055PUJ-E1B-AY

new-10%

Manufacturer part number:NP109N055PUJ-E1B-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 55V MP-25ZP/TO-263

Case Package:SOT-23

Datasheet:NP109N055PUJ-E1B-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 220W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 55A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Ta
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0032Ohm
Pulsed Drain Current-Max (IDM)	440A
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free