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IRF7811AVTR

IRF7811AVTR

IRF7811AVTR

Infineon Technologies

IRF7811AVTR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7811AVTR Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1801pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 10.8A
RoHS Status Non-RoHS Compliant
IRF7811AVTR Product Details

IRF7811AVTR Description


In order to achieve an unheard-of balance between on-resistance and gate charge, this innovative gadget makes use of cutting-edge HEXFET Power MOSFET technology. It is perfect for high efficiency DC-DC converters that power the newest generation of microprocessors because to the decreased conduction and switching losses.

All crucial synchronous buck converter parameters, including as RDS(on), gate charge, and Cdv/dt-induced turn-on immunity, have been optimized for the IRF7811AV. For decreased losses in both control and synchronous FET applications, the IRF7811AV provides an incredibly low combination of Qsw & RDS(on). The package is made for wave, convection, vapor phase, and infrared soldering processes. In a typical PCB mount application, it is feasible to dissipate more power than 2W.



IRF7811AVTR Features


  • N-Channel Application-Specific MOSFETs

  • Ideal for CPU Core DC-DC Converters

  • Low Conduction Losses

  • Low Switching Losses

  • Minimizes Parallel MOSFETs for high current applications

  • 100% RG Tested

  • Lead-Free



IRF7811AVTR Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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