SIR888DP-T1-GE3

new-10%

Manufacturer part number:SIR888DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 25V 40A PPAK SO-8

Case Package:SOT-23

Datasheet:SIR888DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Supplier Device Package	PowerPAK® SO-8
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	5W Ta 48W Tc
Turn On Delay Time	32 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5065pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	16V
Input Capacitance	5.065nF
Drain to Source Resistance	3.25mOhm
Rds On Max	3.25 mΩ
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant