FQI10N60CTU

new-10%

Manufacturer part number:FQI10N60CTU

Manufacturer:ON Semiconductor

Description:MOSFET 600V N-Channel Adv Q-FET C-Series

Case Package:SOT-23

Datasheet:FQI10N60CTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.13W Ta 156W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V