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FQI10N60CTU

FQI10N60CTU

FQI10N60CTU

ON Semiconductor

MOSFET 600V N-Channel Adv Q-FET C-Series

SOT-23

FQI10N60CTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 156W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.5A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:10452 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.992421$0.992421
10$0.936246$9.36246
100$0.883251$88.3251
500$0.833256$416.628
1000$0.786091$786.091

About FQI10N60CTU

The FQI10N60CTU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 600V N-Channel Adv Q-FET C-Series.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI10N60CTU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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