RCX051N25 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1.82 mJ.The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.As shown in the table below, the drain current of this device is 5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 20A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

RCX051N25 Features

the avalanche energy rating (Eas) is 1.82 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 250V drain to source voltage (Vdss)

RCX051N25 Applications

There are a lot of ROHM Semiconductor
RCX051N25 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,