IXFL38N100P

new-10%

Manufacturer part number:IXFL38N100P

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 29A I5-PAK

Case Package:SOT-23

Datasheet:IXFL38N100P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUSi5-Pak™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™, PolarP2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	520W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	24000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	350nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free