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IXFX120N30P3

IXFX120N30P3

IXFX120N30P3

IXYS

MOSFET N-Channel: Power MOSFET w/Fast Diode

SOT-23

IXFX120N30P3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET™, Polar3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1130W Tc
Element Configuration Single
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 27m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 8630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.28000 $12.28
30 $10.32300 $309.69
120 $9.48600 $1138.32
510 $8.09100 $4126.41
1,020 $7.81200 $7.812

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