IRFH5106TR2PBF

new-10%

Manufacturer part number:IRFH5106TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 100A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5106TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	114W
Turn On Delay Time	8.1 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	9.5 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	2.46nF
Recovery Time	42 ns
Drain to Source Resistance	5.6mOhm
Rds On Max	4.3 mΩ
Nominal Vgs	4 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant