FQPF11N40C

new-10%

Manufacturer part number:FQPF11N40C

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FQPF11N40C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	400V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	10.5A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	44W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	44W
Case Connection	ISOLATED
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	530m Ω @ 5.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1090pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.5A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	89ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	10.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	400V
Pulsed Drain Current-Max (IDM)	42A
Height	9.19mm
Length	10.16mm
Width	4.7mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free