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FQPF12N60

  • FQPF12N60
  • FQPF12N60

FQPF12N60

FQPF12N60

ON Semiconductor

FQPF12N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF12N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 55W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.65Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 870 mJ
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.66000 $2.66
500 $2.6334 $1316.7
1000 $2.6068 $2606.8
1500 $2.5802 $3870.3
2000 $2.5536 $5107.2
2500 $2.527 $6317.5
FQPF12N60 Product Details

FQPF12N60 Description


The planar stripe, DMOS technology developed by Fairchild is used to create N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. High efficiency switch mode power supplies work well with FQPF12N60.



FQPF12N60 Features


  • Fast switching

  • 100% avalanche tested

  • Low Crss ( typical 25 pF)

  • Improved dv/dt capability

  • Low gate charge ( typical 42 nC)

  • 5.8A, 600V, RDS(on) = 0.7 ? @ VGS = 10 V



FQPF12N60 Applications


  • Industrial

  • Automotive

  • Communications equipment


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