IRF840B

new-10%

Manufacturer part number:IRF840B

Manufacturer:ON Semiconductor

Description:IRF840B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IRF840B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Resistance	800mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	134W Tc
Element Configuration	Single
Power Dissipation	134W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Input Capacitance	1.8nF
Drain to Source Resistance	650mOhm
Rds On Max	800 mΩ
Nominal Vgs	4 V
Width	10.67mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free