FQPF16N15

new-10%

Manufacturer part number:FQPF16N15

Manufacturer:ON Semiconductor

Description:FQPF16N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF16N15 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 23 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	16.4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	53W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	53W
Case Connection	ISOLATED
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.6A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	115ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	11.6A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	46.4A
Height	9.19mm
Length	10.16mm
Width	4.7mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free