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IPD031N03M G

IPD031N03M G

IPD031N03M G

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

SOT-23

IPD031N03M G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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