FQPF18N20V2

new-10%

Manufacturer part number:FQPF18N20V2

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 18A TO-220F

Case Package:SOT-23

Datasheet:FQPF18N20V2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	140m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	133ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free