RJ1G12BGNTLL

new-10%

Manufacturer part number:RJ1G12BGNTLL

Manufacturer:ROHM Semiconductor

Description:RJ1G12BGN IS A POWER MOSFET WITH

Case Package:SOT-23

Datasheet:RJ1G12BGNTLL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	178W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.86m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	12500pF @ 20V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.00208Ohm
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	117 mJ
RoHS Status	ROHS3 Compliant