FQPF22N30

new-10%

Manufacturer part number:FQPF22N30

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 300V 12A TO-220F

Case Package:SOT-23

Datasheet:FQPF22N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	300V
Technology	MOSFET (Metal Oxide)
Current Rating	12A
Number of Elements	1
Power Dissipation-Max	56W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
Case Connection	ISOLATED
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	48A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free